2SJ652-RA11

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Overview of 2SJ652-RA11

Part Number2SJ652-RA11
ManufacturerSanyo
DescriptionPOWER MOSFET MOTOR DRIVERS
DatasheetsDownload 2SJ652-RA11 Datasheet PDFPDF Icon
Price for 2SJ652-RA11

Specification of 2SJ652-RA11

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
28A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
38mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4360 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220ML
Package / Case
TO-220-3 Full Pack

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