2SJ655

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Overview of 2SJ655

Part Number2SJ655
Manufactureronsemi
DescriptionMOSFET P-CH 100V 12A TO220ML
DatasheetsDownload 2SJ655 Datasheet PDFPDF Icon
Price for 2SJ655

Specification of 2SJ655

Status
Obsolete
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
136mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
2090 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 25W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220ML
Package / Case
TO-220-3 Full Pack

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