2SK1058-E

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Overview of 2SK1058-E

Part Number2SK1058-E
ManufacturerRenesas Electronics America
DescriptionMOSFET N-CH 160V 7A TO3P
DatasheetsDownload 2SK1058-E Datasheet PDFPDF Icon
Price for 2SK1058-E

Specification of 2SK1058-E

Status
Active
Package
Tube
Supplier
Renesas Electronics America Inc
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
160 V
Current - Continuous Drain (Id) @ 25C
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
15V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-220-3 Full Pack

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