2SK536-TB-E

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Overview of 2SK536-TB-E

Part Number2SK536-TB-E
Manufactureronsemi
DescriptionMOSFET N-CH 50V 100MA SC59
Price for 2SK536-TB-E

Specification of 2SK536-TB-E

Status
Obsolete
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk
Supplier
onsemi,Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25C
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
20Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
15 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
200mW (Ta)
Operating Temperature
125C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-CP
Package / Case
TO-236-3, SC-59, SOT-23-3

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