APTM10TDUM09PG

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Overview of APTM10TDUM09PG

Part NumberAPTM10TDUM09PG
ManufacturerMicrosemi
DescriptionMOSFET 6N-CH 100V 139A SP6-P
Price for APTM10TDUM09PG

Specification of APTM10TDUM09PG

Status
Obsolete
Package
Bulk
Supplier
Microchip Technology
Technology
MOSFET (Metal Oxide)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25C
139A
Rds On (Max) @ Id, Vgs
10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id
4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
9875pF @ 25V
Power - Max
390W
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP6
Supplier Device Package
SP6-P

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