APTM120A80FT1G

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Overview of APTM120A80FT1G

Part NumberAPTM120A80FT1G
ManufacturerMicrosemi
DescriptionMOSFET 2N-CH 1200V 14A SP1
DatasheetsDownload APTM120A80FT1G Datasheet PDFPDF Icon
Price for APTM120A80FT1G

Specification of APTM120A80FT1G

Status
Obsolete
Package
Bulk
Supplier
Microchip Technology
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
14A
Rds On (Max) @ Id, Vgs
960mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
6696pF @ 25V
Power - Max
357W
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP1
Supplier Device Package
SP1

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