APTM120H29FG

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Overview of APTM120H29FG

Part NumberAPTM120H29FG
ManufacturerMicrochip Technology
DescriptionMOSFET 4N-CH 1200V 34A SP6
DatasheetsDownload APTM120H29FG Datasheet PDFPDF Icon
Price for APTM120H29FG

Specification of APTM120H29FG

Status
Active
Series
POWER MOS 7®
Package
Bulk
Supplier
Microchip Technology
Technology
MOSFET (Metal Oxide)
Configuration
4 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
34A
Rds On (Max) @ Id, Vgs
348mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
10300pF @ 25V
Power - Max
780W
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP6
Supplier Device Package
SP6

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