APTM120TDU57PG

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Overview of APTM120TDU57PG

Part NumberAPTM120TDU57PG
ManufacturerMicrosemi
DescriptionMOSFET 6N-CH 1200V 17A SP6-P
DatasheetsDownload APTM120TDU57PG Datasheet PDFPDF Icon
Price for APTM120TDU57PG

Specification of APTM120TDU57PG

Status
Obsolete
Package
Bulk
Supplier
Microchip Technology
Technology
MOSFET (Metal Oxide)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
17A
Rds On (Max) @ Id, Vgs
684mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
5155pF @ 25V
Power - Max
390W
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP6
Supplier Device Package
SP6-P

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