BS108,126

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Overview of BS108,126

Part NumberBS108,126
ManufacturerNXP Semiconductors
DescriptionMOSFET N-CH 200V 300MA TO92-3
DatasheetsDownload BS108,126 Datasheet PDFPDF Icon
Price for BS108,126

Specification of BS108,126

Status
Obsolete
Package
Tape & Box (TB)
Supplier
NXP USA Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.8V
Rds On (Max) @ Id, Vgs
5Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id
1.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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