BSB012N03LX3G

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Overview of BSB012N03LX3G

Part NumberBSB012N03LX3G
ManufacturerInfineon Technologies
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload BSB012N03LX3G Datasheet PDFPDF Icon
Price for BSB012N03LX3G

Specification of BSB012N03LX3G

Status
Active
Series
OptiMOS™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
169 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
16900 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2, CanPAK M
Package / Case
3-WDSON

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