BSC018NE2LSIATMA1

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Overview of BSC018NE2LSIATMA1

Part NumberBSC018NE2LSIATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 25V 29A/100A TDSON
DatasheetsDownload BSC018NE2LSIATMA1 Datasheet PDFPDF Icon
Price for BSC018NE2LSIATMA1

Specification of BSC018NE2LSIATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25C
29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 69W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-6
Package / Case
8-PowerTDFN

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