BSC090N03MSGXT

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Overview of BSC090N03MSGXT

Part NumberBSC090N03MSGXT
ManufacturerInfineon Technologies
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload BSC090N03MSGXT Datasheet PDFPDF Icon
Price for BSC090N03MSGXT

Specification of BSC090N03MSGXT

Status
Active
Series
OptiMOS™ 3
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
12A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 32W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-5
Package / Case
8-PowerTDFN

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