BSC123N08NS3GATMA1

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Overview of BSC123N08NS3GATMA1

Part NumberBSC123N08NS3GATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 80V 11A/55A TDSON
DatasheetsDownload BSC123N08NS3GATMA1 Datasheet PDFPDF Icon
Price for BSC123N08NS3GATMA1

Specification of BSC123N08NS3GATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25C
11A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
12.3mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33A
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1870 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 66W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN

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