BSM180D12P2E002

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Overview of BSM180D12P2E002

Part NumberBSM180D12P2E002
ManufacturerROHM Semiconductor
Description1200V, 204A, HALF BRIDGE, SILICO
DatasheetsDownload BSM180D12P2E002 Datasheet PDFPDF Icon
Price for BSM180D12P2E002

Specification of BSM180D12P2E002

Status
Active
Package
Bulk
Supplier
Rohm Semiconductor
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
204A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
18000pF @ 10V
Power - Max
1360W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module

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