CP373-CTLDM303N-CT

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Overview of CP373-CTLDM303N-CT

Part NumberCP373-CTLDM303N-CT
ManufacturerCentral Semiconductor
DescriptionMOSFET N-CH 30V 3.6A DIE
DatasheetsDownload CP373-CTLDM303N-CT Datasheet PDFPDF Icon
Price for CP373-CTLDM303N-CT

Specification of CP373-CTLDM303N-CT

Status
Obsolete
Package
Bulk
Supplier
Central Semiconductor Corp
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id
1.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 4.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
590 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

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