CSD16323Q3T

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Overview of CSD16323Q3T

Part NumberCSD16323Q3T
ManufacturerTexas Instruments
DescriptionPROTOTYPE
DatasheetsDownload CSD16323Q3T Datasheet PDFPDF Icon
Price for CSD16323Q3T

Specification of CSD16323Q3T

Status
Active
Series
NexFET™
Package
Bulk
Supplier
Texas Instruments
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25C
20A (Ta), 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 24A, 8V
Vgs(th) (Max) @ Id
1.4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
8.4 nC @ 4.5 V
Vgs (Max)
+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 12.5 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 74W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-VSON-CLIP (3.3x3.3)
Package / Case
8-PowerTDFN

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