CSD18536KTTT

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Overview of CSD18536KTTT

Part NumberCSD18536KTTT
ManufacturerTexas Instruments
DescriptionMOSFET N-CH 60V 200A/349A DDPAK
DatasheetsDownload CSD18536KTTT Datasheet PDFPDF Icon
Price for CSD18536KTTT

Specification of CSD18536KTTT

Status
Active
Series
NexFET™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Texas Instruments
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
200A (Ta), 349A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
11430 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DDPAK/TO-263-3
Package / Case
TO-263-4, DPak (3 Leads + Tab), TO-263AA

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