CSD19537Q3

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Overview of CSD19537Q3

Part NumberCSD19537Q3
ManufacturerTexas Instruments
DescriptionMOSFET N-CH 100V 9.7A/50A 8VSON
DatasheetsDownload CSD19537Q3 Datasheet PDFPDF Icon
Price for CSD19537Q3

Specification of CSD19537Q3

Status
Active
Series
NexFET™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Texas Instruments
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
14.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.6V @ 250A
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 83W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-VSON (3.3x3.3)
Package / Case
8-PowerVDFN

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