CSD25301W1015

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Overview of CSD25301W1015

Part NumberCSD25301W1015
ManufacturerTexas Instruments
DescriptionMOSFET P-CH 20V 2.2A 6DSBGA
DatasheetsDownload CSD25301W1015 Datasheet PDFPDF Icon
Price for CSD25301W1015

Specification of CSD25301W1015

Status
Obsolete
Series
NexFET™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Texas Instruments
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
75mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-DSBGA (1x1.5)
Package / Case
6-UFBGA, DSBGA

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