DMN1032UCP4-7

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Overview of DMN1032UCP4-7

Part NumberDMN1032UCP4-7
ManufacturerDiodes Incorporated
DescriptionMOSFET BVDSS: 8V~24V X1-DSN1010-
DatasheetsDownload DMN1032UCP4-7 Datasheet PDFPDF Icon
Price for DMN1032UCP4-7

Specification of DMN1032UCP4-7

Status
Active
Package
Bulk
Supplier
Diodes Incorporated
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25C
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
28mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
1.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
3.2 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
325 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
790mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
X1-DSN1010-4 (Type B)
Package / Case
4-XFBGA, DSBGA

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