EMF5XV6T1G

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Overview of EMF5XV6T1G

Part NumberEMF5XV6T1G
Manufactureronsemi
DescriptionTRANS PREBIAS 1NPN 1PNP SOT563
DatasheetsDownload EMF5XV6T1G Datasheet PDFPDF Icon
Price for EMF5XV6T1G

Specification of EMF5XV6T1G

Status
Active
Series
EMF
Package
Tape & Reel (TR)
Supplier
onsemi
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
50V, 12V
Resistor - Base (R1)
47kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300A, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)
500nA, 100nA (ICBO)
Frequency - Transition
-
Power - Max
357mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-563

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