EPC2021ENGR

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Overview of EPC2021ENGR

Part NumberEPC2021ENGR
ManufacturerEPC
DescriptionTRANS GAN 80V 60A BUMPED DIE
DatasheetsDownload EPC2021ENGR Datasheet PDFPDF Icon
Price for EPC2021ENGR

Specification of EPC2021ENGR

Status
Obsolete
Series
eGaN®
Package
Cut Tape (CT)
Supplier
EPC
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25C
60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id
2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 5 V
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

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