EPC2108

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Overview of EPC2108

Part NumberEPC2108
ManufacturerEPC
DescriptionGANFET 3 N-CH 60V/100V 9BGA
DatasheetsDownload EPC2108 Datasheet PDFPDF Icon
Price for EPC2108

Specification of EPC2108

Status
Obsolete
Series
eGaN®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
EPC
Technology
GaNFET (Gallium Nitride)
Configuration
3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature
-
Drain to Source Voltage (Vdss)
60V, 100V
Current - Continuous Drain (Id) @ 25C
1.7A, 500mA
Rds On (Max) @ Id, Vgs
190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id
2.5V @ 100A, 2.5V @ 20A
Gate Charge (Qg) (Max) @ Vgs
0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
22pF @ 30V, 7pF @ 30V
Power - Max
-
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
9-VFBGA
Supplier Device Package
9-BGA (1.35x1.35)

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