FCP9N60N

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Overview of FCP9N60N

Part NumberFCP9N60N
Manufactureronsemi
DescriptionMOSFET N-CH 600V 9A TO220-3
DatasheetsDownload FCP9N60N Datasheet PDFPDF Icon
Price for FCP9N60N

Specification of FCP9N60N

Status
Obsolete
Series
SuperMOS™
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
90A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
83 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4510 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
ATPAK
Package / Case
ATPAK (2 Leads+Tab)

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