FDD1600N10ALZD

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Overview of FDD1600N10ALZD

Part NumberFDD1600N10ALZD
Manufactureronsemi
DescriptionPOWER FIELD-EFFECT TRANSISTOR, 6
DatasheetsDownload FDD1600N10ALZD Datasheet PDFPDF Icon
Price for FDD1600N10ALZD

Specification of FDD1600N10ALZD

Status
Active
Series
PowerTrench®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
160mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250A
Gate Charge (Qg) (Max) @ Vgs
3.61 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
14.9W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-5, DPak (4 Leads + Tab), TO-252AD

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