FDG6303N_G

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Overview of FDG6303N_G

Part NumberFDG6303N_G
Manufactureronsemi
DescriptionINTEGRATED CIRCUIT
Price for FDG6303N_G

Specification of FDG6303N_G

Status
Obsolete
Package
Bulk
Supplier
onsemi
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25C
500mA
Rds On (Max) @ Id, Vgs
450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Power - Max
300mW
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-88 (SC-70-6)

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