FDN352AP

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Overview of FDN352AP

Part NumberFDN352AP
ManufacturerFairchild Semiconductor
DescriptionSMALL SIGNAL FIELD-EFFECT TRANSI
DatasheetsDownload FDN352AP Datasheet PDFPDF Icon
Price for FDN352AP

Specification of FDN352AP

Status
Active
Series
PowerTrench®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
180mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
1.9 nC @ 4.5 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3

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