FQB6N40CFTM

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Overview of FQB6N40CFTM

Part NumberFQB6N40CFTM
ManufacturerFairchild Semiconductor
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload FQB6N40CFTM Datasheet PDFPDF Icon
Price for FQB6N40CFTM

Specification of FQB6N40CFTM

Status
Active
Series
FRFET™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
625 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
113W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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