FQB9N08LTM

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Overview of FQB9N08LTM

Part NumberFQB9N08LTM
Manufactureronsemi
DescriptionMOSFET N-CH 80V 9.3A D2PAK
DatasheetsDownload FQB9N08LTM Datasheet PDFPDF Icon
Price for FQB9N08LTM

Specification of FQB9N08LTM

Status
Obsolete
Series
QFET®
Package
Tape & Reel (TR)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25C
9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
210mOhm @ 4.65A, 10V
Vgs(th) (Max) @ Id
2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 40W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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