FQNL1N50BTA

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Overview of FQNL1N50BTA

Part NumberFQNL1N50BTA
Manufactureronsemi
DescriptionMOSFET N-CH 500V 270MA TO92-3
DatasheetsDownload FQNL1N50BTA Datasheet PDFPDF Icon
Price for FQNL1N50BTA

Specification of FQNL1N50BTA

Status
Obsolete
Series
QFET®
Package
Tape & Box (TB)
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
270mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9Ohm @ 135mA, 10V
Vgs(th) (Max) @ Id
3.7V @ 250A
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)

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