FQU3P20TU

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Overview of FQU3P20TU

Part NumberFQU3P20TU
Manufactureronsemi
DescriptionMOSFET P-CH 200V 2.4A IPAK
DatasheetsDownload FQU3P20TU Datasheet PDFPDF Icon
Price for FQU3P20TU

Specification of FQU3P20TU

Status
Obsolete
Series
QFET®
Package
Tube
Supplier
onsemi
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.7Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 37W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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