G085P02TS

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Overview of G085P02TS

Part NumberG085P02TS
ManufacturerGoford Semiconductor
DescriptionP-20V,-8.2A,RD(MAX)<[email protected],V
DatasheetsDownload G085P02TS Datasheet PDFPDF Icon
Price for G085P02TS

Specification of G085P02TS

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250A
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
1255 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.05W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSSOP
Package / Case
8-TSSOP (0.173", 4.40mm Width)

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