G2003A

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Overview of G2003A

Part NumberG2003A
ManufacturerGoford Semiconductor
DescriptionN190V, 3A,RD<540M@10V,VTH1.0V~3.
DatasheetsDownload G2003A Datasheet PDFPDF Icon
Price for G2003A

Specification of G2003A

Status
Active
Series
G
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
190 V
Current - Continuous Drain (Id) @ 25C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
540mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
580 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3

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