G28N02T

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Overview of G28N02T

Part NumberG28N02T
ManufacturerGoford Semiconductor
DescriptionN20V, 28A, RD<[email protected],VTH0.5V~
Price for G28N02T

Specification of G28N02T

Status
Active
Package
Tube
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
7.3mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250A
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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