G3R450MT17J

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Overview of G3R450MT17J

Part NumberG3R450MT17J
ManufacturerGeneSiC Semiconductor
DescriptionSIC MOSFET N-CH 9A TO263-7
DatasheetsDownload G3R450MT17J Datasheet PDFPDF Icon
Price for G3R450MT17J

Specification of G3R450MT17J

Status
Active
Series
G3R™
Package
Tube
Supplier
GeneSiC Semiconductor
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
585mOhm @ 4A, 15V
Vgs(th) (Max) @ Id
2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 15 V
Vgs (Max)
15V
Input Capacitance (Ciss) (Max) @ Vds
454 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
91W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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