G3S12010P

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Overview of G3S12010P

Part NumberG3S12010P
ManufacturerGlobal Power Technology Co. Ltd
DescriptionDIODE SIL CARB 1.2KV 37A TO247AC
DatasheetsDownload G3S12010P Datasheet PDFPDF Icon
Price for G3S12010P

Specification of G3S12010P

Status
Active
Package
Bulk
Supplier
Global Power Technology Co. Ltd
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
37A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 110 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 1200 V
Capacitance @ Vr, F
765pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-2
Supplier Device Package
TO-247AC
Operating Temperature - Junction
-55C ~ 175C

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