G4S06510JT

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Overview of G4S06510JT

Part NumberG4S06510JT
ManufacturerGlobal Power Technology Co. Ltd
DescriptionDIODE SIC 650V 31.2A TO220ISO
DatasheetsDownload G4S06510JT Datasheet PDFPDF Icon
Price for G4S06510JT

Specification of G4S06510JT

Status
Active
Package
Bulk
Supplier
Global Power Technology Co. Ltd
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
31.2A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 650 V
Capacitance @ Vr, F
550pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2 Isolated Tab
Supplier Device Package
TO-220ISO
Operating Temperature - Junction
-55C ~ 175C

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