G5S12005D

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Overview of G5S12005D

Part NumberG5S12005D
ManufacturerGlobal Power Technology-GPT
DescriptionDIODE SIL CARB 1.2KV 21A TO263
DatasheetsDownload G5S12005D Datasheet PDFPDF Icon
Price for G5S12005D

Specification of G5S12005D

Status
Active
Package
Cut Tape (CT),Tape & Box (TB)
Supplier
Global Power Technology-GPT
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
21A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 5 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 1200 V
Capacitance @ Vr, F
424pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263
Operating Temperature - Junction
-55C ~ 175C

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