G5S12010PM

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Overview of G5S12010PM

Part NumberG5S12010PM
ManufacturerGlobal Power Technology Co. Ltd
DescriptionDIODE SIL CARB 1.2KV 33A TO247AC
DatasheetsDownload G5S12010PM Datasheet PDFPDF Icon
Price for G5S12010PM

Specification of G5S12010PM

Status
Active
Package
Bulk
Supplier
Global Power Technology Co. Ltd
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
33A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 1200 V
Capacitance @ Vr, F
825pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-2
Supplier Device Package
TO-247AC
Operating Temperature - Junction
-55C ~ 175C

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