GAN3R2-100CBEAZ

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Overview of GAN3R2-100CBEAZ

Part NumberGAN3R2-100CBEAZ
ManufacturerNexperia
Description100 V, 3.2 MOHM GALLIUM NITRIDE
DatasheetsDownload GAN3R2-100CBEAZ Datasheet PDFPDF Icon
Price for GAN3R2-100CBEAZ

Specification of GAN3R2-100CBEAZ

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Nexperia USA Inc.
FET Type
P-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
60A
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
394W
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-WLCSP (3.5x2.13)
Package / Case
8-XFBGA, WLCSP

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