GB01SLT12-252

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Overview of GB01SLT12-252

Part NumberGB01SLT12-252
ManufacturerGeneSiC Semiconductor
DescriptionDIODE SIL CARBIDE 1.2KV 1A TO252
DatasheetsDownload GB01SLT12-252 Datasheet PDFPDF Icon
Price for GB01SLT12-252

Specification of GB01SLT12-252

Status
Active
Series
SiC Schottky MPS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
GeneSiC Semiconductor
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 1 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
2 A @ 1200 V
Capacitance @ Vr, F
69pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252
Operating Temperature - Junction
-55C ~ 175C

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