GE12047BCA3

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Overview of GE12047BCA3

Part NumberGE12047BCA3
ManufacturerGE Aerospace
Description1200V 475A SiC Dual Module
DatasheetsDownload GE12047BCA3 Datasheet PDFPDF Icon
Price for GE12047BCA3

Specification of GE12047BCA3

Status
Active
Series
SiC Power
Package
Box
Supplier
GE Aerospace
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
475A
Rds On (Max) @ Id, Vgs
4.4mOhm @ 475A, 20V
Vgs(th) (Max) @ Id
4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs
1248nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds
29300pF @ 600V
Power - Max
1250W
Operating Temperature
-55C ~ 150C (Tc)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-

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