GT025N06AM

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Overview of GT025N06AM

Part NumberGT025N06AM
ManufacturerGoford Semiconductor
DescriptionN60V,170A,RD<2.5M@10V,VTH1.2V~2.
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Price for GT025N06AM

Specification of GT025N06AM

Status
Active
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5119 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
215W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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