GT025N06AT

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Overview of GT025N06AT

Part NumberGT025N06AT
ManufacturerGoford Semiconductor
DescriptionN60V, 170A,RD<2.5M@10V,VTH1.2V~2
DatasheetsDownload GT025N06AT Datasheet PDFPDF Icon
Price for GT025N06AT

Specification of GT025N06AT

Status
Active
Package
Tube,Tube
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
170A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4954 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
215W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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