GT10J312(Q)

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Overview of GT10J312(Q)

Part NumberGT10J312(Q)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionIGBT 600V 10A 60W TO220SM
DatasheetsDownload GT10J312(Q) Datasheet PDFPDF Icon
Price for GT10J312(Q)

Specification of GT10J312(Q)

Status
Obsolete
Package
Tube
Supplier
Toshiba Semiconductor and Storage
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
10 A
Current - Collector Pulsed (Icm)
20 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Power - Max
60 W
Switching Energy
-
Input Type
Standard
Gate Charge
-
Td (on/off) @ 25C
400ns/400ns
Test Condition
300V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr)
200 ns
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-220SM

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