GT30J341,Q

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Overview of GT30J341,Q

Part NumberGT30J341,Q
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionIGBT TRANS 600V 30A TO3PN
DatasheetsDownload GT30J341,Q Datasheet PDFPDF Icon
Price for GT30J341,Q

Specification of GT30J341,Q

Status
Active
Package
Tray
Supplier
Toshiba Semiconductor and Storage
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
59 A
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 30A
Power - Max
230 W
Switching Energy
800J (on), 600J (off)
Input Type
Standard
Gate Charge
-
Td (on/off) @ 25C
80ns/280ns
Test Condition
300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr)
50 ns
Operating Temperature
175C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P(N)

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