HAT1069C-EL-E

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Overview of HAT1069C-EL-E

Part NumberHAT1069C-EL-E
ManufacturerRenesas Electronics America
DescriptionMOSFET P-CH 12V 4A 6CMFPAK
DatasheetsDownload HAT1069C-EL-E Datasheet PDFPDF Icon
Price for HAT1069C-EL-E

Specification of HAT1069C-EL-E

Status
Obsolete
Package
Tape & Reel (TR)
Supplier
Renesas Electronics America Inc
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25C
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
52mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
1380 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
900mW (Ta)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
6-CMFPAK
Package / Case
6-SMD, Flat Leads

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