HAT2173N-EL-E

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Overview of HAT2173N-EL-E

Part NumberHAT2173N-EL-E
ManufacturerRenesas Electronics America
DescriptionMOSFET N-CH 100V 25A 8LFPAK
DatasheetsDownload HAT2173N-EL-E Datasheet PDFPDF Icon
Price for HAT2173N-EL-E

Specification of HAT2173N-EL-E

Status
Obsolete
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
15.3mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
6V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
4350 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-LFPAK-iV
Package / Case
8-PowerSOIC (0.154", 3.90mm Width)

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