HGT1S10N120BNS

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Overview of HGT1S10N120BNS

Part NumberHGT1S10N120BNS
ManufacturerFairchild Semiconductor
DescriptionIGBT, 35A, 1200V, N-CHANNEL, TO-
DatasheetsDownload HGT1S10N120BNS Datasheet PDFPDF Icon
Price for HGT1S10N120BNS

Specification of HGT1S10N120BNS

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
35 A
Current - Collector Pulsed (Icm)
80 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Power - Max
298 W
Switching Energy
320J (on), 800J (off)
Input Type
Standard
Gate Charge
100 nC
Td (on/off) @ 25C
23ns/165ns
Test Condition
960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AB

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