HGTP10N120BN

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Overview of HGTP10N120BN

Part NumberHGTP10N120BN
Manufactureronsemi
DescriptionIGBT 1200V 35A 298W TO220AB
DatasheetsDownload HGTP10N120BN Datasheet PDFPDF Icon
Price for HGTP10N120BN

Specification of HGTP10N120BN

Status
Obsolete
Package
Tube
Supplier
onsemi
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
35 A
Current - Collector Pulsed (Icm)
80 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Power - Max
298 W
Switching Energy
320J (on), 800J (off)
Input Type
Standard
Gate Charge
100 nC
Td (on/off) @ 25C
23ns/165ns
Test Condition
960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3

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